scrider
29.12.10, 04:06
Dobrzy ludzie, pomóżcie proszę:
1. Tewksbury, S., Biazzo, M., Harrison, T., Lindstrom, T., Tennant, D. and Storz, F. "Static and nonequilibrium transient conductance at strong freeze-out in a buried channel metal-oxide-semiconductor transistor" J Appl Phys (1984) 56, 511-515
2. Foty, D. and Titcomb, S. "Substrate freeze-out and field dependent donor acceptor ionization in MOSFETs at vey low temperatures" Proc Symposium on Low Temperature Electronics and High Temperature Supercondutors, The Electrochemical Society Inc., Pennington, NJ, USA (1988), 151-160
Ten drugi jest racze nieosiągalny... Dziękuję!